c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . rev, c nov.2008 SFP50N06 SFP50N06 SFP50N06 SFP50N06 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features r ds(on) (max 22m )@v gs =10v ultra-low gate charge(typical 31 nc) fast switching capability 100%avalanche tested maximum junction temperature range(1 50 ) general description this power mosfet is produced using winsemi s trench layout-based process.this technology improves the performances compared with standard parts from various sources. all of these power mosfets are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. absolute maximum ratings symbol parameter value units v dss drain source voltage 60 v i d continuous drain current(@tc=25 ) 50 a continuous drain current(@tc=100 ) 38 a i dm drain current pulsed (note1) 200 a v gs gate to source voltage 25 v e as single pulsed avalanche energy ( note 2) 480 mj e ar repetitive avalanche energy ( note 2) 13 mj dv/dt peak diode recovery dv/dt (note 3) 5.8 v/ns p d total power dissipation(@tc=25 ) 130 w derating factor above 25 1.3 w/ t j, t stg junction and storage temperature -55~150 t l channel temperature ( f o r 10 se c o nds) 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 0.96 /w r qcs c ase-t o -sin k , flat, greased su r f a c e 0.5 /w r qja thermal resistance, junction-to-ambient - - 62.5 /w g g g g d d d d s s s s to220 to220 to220 to220
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 2 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 electrical characteristics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 20 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 20 - - v drain cut ? off current i dss v ds = 60 v, v gs = 0 v - - 1 a v ds = 60 v, tc = 125 c - - 250 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 60 - - v gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 25a - 20 22 m ? forward transconductance g fs v ds =25v, i d = 25a - 22 - s input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz - 1180 1540 pf reverse transfer capacitance c rss - 64 91 output capacitance c oss - 440 580 switching time rise time tr v d d =30v i d = 25 a r g =25 ? v gs = 10v (note4,5) - 15 40 ns turn ? on time ton - 105 220 fall time tf - 60 130 turn ? off time toff - 65 140 total gate charge (gate ? source plus gate ? drain) qg vdd =48 v, vgs = 10 v, id =50 a (note4,5) - 31 41 nc gate ? source charge qgs - 8 - gate ? drain ( miller ) charge qgd - 13 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 59 a pulse drain reverse current i drp - - - 200 a forward voltage (diode) v dsf i dr = 35 a, vgs = 0 v - - 1. 5 v reverse recovery time trr i dr = 35 a, vgs = 0 v, di dr / dt = 100 a / s - 52 - n s reverse recovery charge qrr - 75 - c n ote 1.repeativity rating :pulse width limited by junction temperature 2.l= 0.5 mh,i as = 25 a,v dd = 25 v,v gs = 10 v,starting t j =25 3.i sd 25 a,di/dt 3 8 0a/us, v dd steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 3 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 this transistor is an electrostatic sensitive device please handle with caution fig. 1 transfer characteristics fig. 3 typical capacitance vs drain current fig. 5 on-resistance variation vs junction temperature fig. 4 on-resistance variation vs drain current and gate voltage fig. 6 gate charge characteristics fig.2 on- statet characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 4 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 fig. 7 maximum safe operation area fig. 9 transient thermal response curve fig. 8 maximum drain current vs case temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 5 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 fig.1 0 gate test circuit & waveform fig.11 fig.11 fig.11 fig.11 resistive resistive resistive resistive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.12 fig.12 fig.12 fig.12 unclamped unclamped unclamped unclamped inductive inductive inductive inductive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 6 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 fig.1 3 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 7 / 7 SFP50N06 SFP50N06 SFP50N06 SFP50N06 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm unit:mm unit:mm unit:mm
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